Subband characteristics of the two-dimensional inversion carrier system in p-InSb-bicrystals

Electrical subband characteristics of a quasi-two-dimensional inversion layer of carriers existing near the grain boundary in p-InSb bicrystals are investigatd. The differential transverse magnetoresistance and Hall resistance were measured in magnetic fields up to 7.5 T and at 4.2 K. Two observed quantum oscillation series are connected with two subbands. The modulation of the low field region is caused by the carriers of the third subband. Carrier concentration, carrier mobilities, the effective masses of inversion carriers in the subbands and the subband energies are determined