Stimulated intrinsic recombination processes in II-IV compounds

The intrinsic-recombination processes are investigated in highly excited II-VI compound semiconductors which involve the following scattering processes: the exciton-exciton scattering (P2 line), the exciton-electron or -hole scattering, and the scattering of an exciton by emission of a longitudinal optical phonon. From the stationary rate equations the laser threshold and the maxima of the spontaneous and stimulated emission for the various processes are determined. Experimental investigations of these emission processes are carried out for CdS platelets, ZnO and ZnTe crystals. Good agreement between experimental results and theoretical predictions for the temperature dependences of the laser thresholds, and of the emission maxima is obtained. (author)