Published 2010 | Version v1
Miscellaneous Metadata-only

Study of radiation damages on the electrical properties of Si diodes

Creators

  • 1. Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)
  • 2. Pontificia Univ. Catolica de Sao Paulo (DF/PUC-SP), SP (Brazil). Dept. de Fisica

Description

no abstract available

Availability note (English)

Available in abstract form only, full text entered in this record

Additional details

Additional titles

Original title (Portuguese)
Estudo dos danos de radiacao nas propriedades eletricas de diodos de Si

Publishing Information

Imprint Pagination
[1 p.]

Conference

Title
33. Workshop on nuclear physics in Brazil
Original Conference Title
33. Reuniao de trabalho sobre fisica nuclear no Brasil
Dates
7-11 Sep 2010
Place
Campos do Jordao, SP (Brazil)

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
42008909
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
DAMAGING NEUTRON FLUENCE; ELECTRICAL PROPERTIES; ELECTRICITY; ELECTRO-OPTICAL EFFECTS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES
Descriptors DEC
ELEMENTS; NEUTRON FLUENCE; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS