Published September 2004 | Version v1
Journal article

Dielectric properties of Bi3.25Nd0.75Ti3O12 thin film

  • 1. Chungbuk National University, Cheongju (Korea, Republic of)
  • 2. SungKunKwan University, Suwon (Korea, Republic of)

Description

Bi4-xNdxTi3O12 (BNdT) thin films with the composition (x = 0.75) have been prepared on Pt/Ti/SiO2 /Si(100) substrates by using metal-organic precursor solutions by a chemical deposition method. The films were annealed at various temperatures from 550 .deg. C to 650 .deg. C. Above 600 .deg. C, well-crystallized BNdT thin films with bismuth layered perovskite structure were obtained and revealed a random orientation without typical (00l) preferred diffraction patterns. The BNdT film annealed at 650 .deg. C exhibited a remanent polarization (2Pr) of 56 μC/cm2 and coercive field (2Ec) of 232 kV/cm, respectively. The capacitor did not show any significant fatigue up to 8 X 1010 read/write switching cycles at a frequency of 1 MHz, regardless of annealing temperature.

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
45
Journal Issue
3
Series
17 refs, 6 figs
Journal Page Range
p. 693-696
ISSN
0374-4884