Published June 6, 1989 | Version v1
Patent

Storing and processing method of gas

Description

This invention concerns a gas storing method of ionizing, for example, radioactive gases and injecting and confining them into the metal texture for storing. A sputtering electrode applied with a voltage in a range of -1.5 KV - -2.5 KV and an ion injection electrode applied with a voltage within a range of -150 - -300 are disposed closed to each other. Gases are introduced between both of the electrodes to cause glow discharge. Gas ions formed by the glow discharge are caused to collide against the sputtering electrode under acceleration by the electric field. Coating layers of the sputtered metal are formed by the collision to the ion injection electrode and the gas ions are confined in the coatings. According to this method, various effects can be expected such that (1) since the injection speed is improved, the productivity is high; (2) since the injection efficiency is improved, economical advantage can be enhanced and (3) since both of productivity and economicity are high, there is a great practical usefulness in a large plant. (K.M.)

Availability note (English)

Available from JAPIO. Also available from INPADOC.

Additional details

Publishing Information

Imprint Pagination
6 p.
IPC:
Int. Cl. G21F9/02.
IPC
Int. Cl. G21F9/02.
Patent number
JP patent document 1-143999/A/

INIS

Optional Information

Secondary number(s)
JP patent application 62-302506.