X-ray photoelectron spectroscopy study of Al/Ta2O5 and Ta2O5/Al buried interfaces
- 1. Center for Integrated Electronics and Electronic Manufacturing, and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
- 2. Center for Integrated Electronics and Electronic Manufacturing, and Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Description
Buried interfaces of thin Al/Ta2O5 and Ta2O5/Al films were studied using the x-ray photoelectron spectroscopy technique. The peak decomposition technique was employed to identify the composition and chemical states at the interface region. It was observed that there is an open-quotes intermixing layerclose quotes at the Al/Ta2O5 interface, where Ta2O5 has been reduced to lower binding energy states due to the reaction of Al with Ta2O5 during deposition. On the other hand, the Ta2O5/Al interface is relatively stable, consisting of Ta2O5 and Al2O3 interfacial layers. Based on a uniform multilayer structure model, the thickness of the interfacial layers was estimated by using the relative photoelectron intensities. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 3
- Journal Page Range
- p. 399-401.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28046564
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ELECTRONIC STRUCTURE; INTERFACES; PHOTOELECTRON SPECTROSCOPY; SPUTTERING; TANTALUM OXIDES; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; METALS; OXIDES; OXYGEN COMPOUNDS; SPECTROSCOPY; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS