Published February 2006 | Version v1
Journal article

Effects of heavy ion implantation on crop mutagenesis

  • 1. Institute of Crop Science, Chinese Academy of Agricultural Sciences, Key Lab of Agricultural Nuclear Technology and Aerospace Breeding, Ministry of Agriculture, Beijing (China)
  • 2. Chinese Academy of agricultural Sciences, Beijing (China). Inst. for Application of Atomic Energy
  • 3. Chinese Academy of Agricultural Sciences, Beijing (China). Inst. for Application of Atomic Energy
  • 4. Chinese Academy of Sciences, Lanzhou (China). Inst. of Moden Physics

Description

12C ions with different energy (in MeV level) and flux were implanted into dry seeds of corn and winter wheat. 16O ions with different energy were implanted into dry seeds of winter wheat. The radiation damage of M1 generation seedling and mutagenic effects in M2 generation were studied. Results showed that within a certain energy level, radiation damage on M1 seedling increased with the energy increasing when the integral flux was given. And radiation damage for 12C ion beam with an energy of 12-16 MeV/u in corn, and 16O ion beam with an energy of 8 MeV/u in wheat were obviously greater than that of ion beam with penetration energy (45 MeV/u). The corn mutations induced by 12C ion beam could generate various types, such as dwarf, male sterility, albino, multi-ear, and most albinotic seedlings could turn to normal plants and set seeds. Earliness and dwarf were the most frequent mutations found in winter wheat induced by the two type of ions, and in winter wheat Yuandong 6, the earliness mutation frequency was up to 10.7% induced by 12C ion beam with an energy at 8 MeV/u and integral flux of 80 x 107/cm2, and dwarf mutation frequency reached 7.59% induced by an energy at 8 MeV/u and integral flux of 120 x 107/cm2. Variations of mutation frequencies were found among varieties of corn and wheat. (authors)

Additional details

Publishing Information

Journal Title
Acta Agriculturae Nucleatae Sinica
Journal Volume
20
Journal Issue
1
Journal Page Range
p. 1-5
ISSN
1000-8551

Optional Information

Notes
1 fig., 4 tabs., 15 refs.