Published September 1995
| Version v1
Report
100 Mrad radiation tolerant CMOS devices
Creators
- 1. AEA Technology, Harwell (United Kingdom). Telerobotic Systems
Description
Test transistors and a complete mixed signal integrated circuit, fabricated in the Harris AVLSI-RA process, have been irradiated and shown to function well at total doses greater than 100 Mrad (1 MGy). Results are presented. (author)
Availability note (English)
Available from Rutherford Appleton Laboratory, Chilton. OX11 0QX.Additional details
Publishing Information
- Imprint Pagination
- 4 p.
- Report number
- RAL-TR--95-055
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 27016106
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ELECTRONIC EQUIPMENT; GAMMA RADIATION; IRRADIATION; MOS TRANSISTORS; NUCLEAR INDUSTRY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; EQUIPMENT; INDUSTRY; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS