Published June 1992
| Version v1
Journal article
Characteristics of the annealing of compensating radiation defects in dislocation-free n-type silicon
Creators
- 1. V.I. Lenin Belorussian State Univ., Minsk (Russian Federation)
Description
Microdefects of different types (A, B, D) or shallow inclusions not revealed by etching are formed in the bulk during growth of dislocation-free silicon. The presence of such microdefects or inclusions alters the efficiency of formation of recombination-active and compensating radiation defects. We shall report an analysis of the influence of growth structure defects formed during preparation of dislocation-free crystals on the processes of annealing of radiation defects. 16 refs., 1 fig., 1 tab
Additional details
Publishing Information
- Journal Title
- Soviet Physics - Semiconductors
- Journal Volume
- 26
- Journal Issue
- 6
- Journal Page Range
- p. 639-641.
- ISSN
- 0038-5700
- CODEN
- SPSEAX
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24053196
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CRYSTALS; DISLOCATIONS; EFFICIENCY; ETCHING; GROWTH; HALL EFFECT; INCLUSIONS; INTERSTITIALS; N-TYPE CONDUCTORS; RADIATION EFFECTS; RECOMBINATION; SILICON; TEMPERATURE DEPENDENCE; X RADIATION
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; LINE DEFECTS; MATERIALS; POINT DEFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Cover-to-cover Translation of Fizika I Tekhnika Poluprovodnikov (USSR); Translated from Fiz. Tekh. Poluprovodn.; 26, 1142-1145(Jun 1992).