Published June 22, 2015
| Version v1
Journal article
Optical properties of individual site-controlled Ge quantum dots
Creators
- 1. Center for Advancing Electronics Dresden, CfAED, TU Dresden (Germany)
- 2. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, Dresden 01069 (Germany)
- 3. Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz (Austria)
- 4. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)
- 5. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
Description
We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem
Additional details
Identifiers
- DOI
- 10.1063/1.4923188;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 25
- Journal Page Range
- p. 251904-251904.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47053069
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- EPITAXY; EXCITATION; GERMANIUM SILICIDES; LAYERS; LINE WIDTHS; MEV RANGE 10-100; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POTENTIALS; QUANTUM DOTS; SIGNALS; SUBSTRATES; TRAPS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EMISSION; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; GERMANIUM COMPOUNDS; LUMINESCENCE; MEV RANGE; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2015 Author(s)