Published September 1979
| Version v1
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Interface states in a class of heterojunctions between diatomic semiconductors
- 1. Bylgarska Akademiya na Naukite, Sofia. Inst. za Yadrena Izsledvaniya i Yadrena Energetika
- 2. International Centre for Theoretical Physics, Trieste (Italy)
- 3. Sofia Univ., Sofia (Bulgaria). Dept. of Solid State Physics
Description
The theory of interface state in heterojunctions between diatomic semiconductors is developed in the framework of the S-matrix approach and on the basis of a one-dimensional model. The condition for the existence of interface states is explicitly derived for undeformed and deformed herterojunctions. Numerical analysis is performed and several particular cases are discussed in order to clarify the general features of the problem. (author)
Availability note (English)
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Additional details
Publishing Information
- Imprint Pagination
- 21 p.
- Report number
- IC--79/130
INIS
- Country of Publication
- Italy
- Country of Input or Organization
- Italy
- INIS RN
- 13660327
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ENERGY LEVELS; INTERFACES; ONE-DIMENSIONAL CALCULATIONS; S MATRIX; SEMICONDUCTOR JUNCTIONS; WAVE FUNCTIONS
- Descriptors DEC
- FUNCTIONS; MATRICES