Published January 2015 | Version v1
Journal article

Production quality characterisation techniques of sensors and prototypes for the BELLE II Pixel Detector

  • 1. Max Planck Institute for Physics, Föhringer Ring 6, 80805 Munich (Germany)
  • 2. Semiconductor Laboratory of the Max Planck Society, Otto-Hahn-Ring 6, 81739 Munich (Germany)

Description

The Belle II detector is a system currently under upgrade at the B-factory SuperKEKB in Tsukuba, Japan. The main novelty is the introduction of an additional position sensitive sub-detector in the vertex detector, between the beam pipe and the strip detector system. The sensor of choice for the Belle II Pixel Detector is the Depleted p-channel Field Effect Transistor (DEPFET) sensor. In this paper the latest production of sensors and prototypes performed at the semiconductor Laboratory of the Max Planck Society, i.e. the PXD9 and the Electrical Multi-Chip Module (EMCM), are described. Wafer-level characterisation methods and techniques for faults in the metal system are also reported

Availability note (English)

Available from http://dx.doi.org/10.1088/1748-0221/10/01/C01049

Additional details

Publishing Information

Journal Title
Journal of Instrumentation
Journal Volume
10
Journal Issue
01
Journal Page Range
p. C01049
ISSN
1748-0221

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46042271
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CURRENTS; FIELD EFFECT TRANSISTORS; MESON FACTORIES; SEMICONDUCTOR MATERIALS; SENSORS
Descriptors DEC
ACCELERATORS; MATERIALS; SEMICONDUCTOR DEVICES; TRANSISTORS