Published January 2015
| Version v1
Journal article
Production quality characterisation techniques of sensors and prototypes for the BELLE II Pixel Detector
Creators
- 1. Max Planck Institute for Physics, Föhringer Ring 6, 80805 Munich (Germany)
- 2. Semiconductor Laboratory of the Max Planck Society, Otto-Hahn-Ring 6, 81739 Munich (Germany)
Description
The Belle II detector is a system currently under upgrade at the B-factory SuperKEKB in Tsukuba, Japan. The main novelty is the introduction of an additional position sensitive sub-detector in the vertex detector, between the beam pipe and the strip detector system. The sensor of choice for the Belle II Pixel Detector is the Depleted p-channel Field Effect Transistor (DEPFET) sensor. In this paper the latest production of sensors and prototypes performed at the semiconductor Laboratory of the Max Planck Society, i.e. the PXD9 and the Electrical Multi-Chip Module (EMCM), are described. Wafer-level characterisation methods and techniques for faults in the metal system are also reported
Availability note (English)
Available from http://dx.doi.org/10.1088/1748-0221/10/01/C01049Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Instrumentation
- Journal Volume
- 10
- Journal Issue
- 01
- Journal Page Range
- p. C01049
- ISSN
- 1748-0221
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46042271
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CURRENTS; FIELD EFFECT TRANSISTORS; MESON FACTORIES; SEMICONDUCTOR MATERIALS; SENSORS
- Descriptors DEC
- ACCELERATORS; MATERIALS; SEMICONDUCTOR DEVICES; TRANSISTORS