Published July 1, 2018 | Version v1
Journal article

Controlling morphology evolution of AlN nanostructures: influence of growth conditions in physical vapor transport

  • 1. The 46th Research Institute, CETC, Tianjin 300220 (China)

Description

A series of AlN nanostructures were synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport (PVT) process. Energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-Ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) detection show that high quality AlN nanowires were prepared. Nanostructures including nanorings, nanosprings, nanohelices, chain-like nanowires, six-fold symmetric nanostructure and rod-like structure were successfully obtained by controlling the growth duration and temperature. The morphology evolution was attributed to electrostatic polar charge model and the crystalline lattice structure of AlN. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/39/7/073001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
39
Journal Issue
7
Journal Page Range
[5 p.]
ISSN
1674-4926