Published July 1, 2018
| Version v1
Journal article
Controlling morphology evolution of AlN nanostructures: influence of growth conditions in physical vapor transport
- 1. The 46th Research Institute, CETC, Tianjin 300220 (China)
Description
A series of AlN nanostructures were synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport (PVT) process. Energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-Ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) detection show that high quality AlN nanowires were prepared. Nanostructures including nanorings, nanosprings, nanohelices, chain-like nanowires, six-fold symmetric nanostructure and rod-like structure were successfully obtained by controlling the growth duration and temperature. The morphology evolution was attributed to electrostatic polar charge model and the crystalline lattice structure of AlN. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/39/7/073001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 39
- Journal Issue
- 7
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51067301
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTROSTATICS; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY SPECTROSCOPY
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; MICROSCOPY; NANOSTRUCTURES; PHOTOELECTRON SPECTROSCOPY; SCATTERING; SPECTROSCOPY