Published 1989
| Version v1
Book
Frequency dependence of the conductivity and dielectric constant of La2CuO4+y near the insulator-metal transition
Creators
- 1. Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (USA)
Description
Measurements are reported of the conductivity and the dielectric constant (ε1) at frequencies (ω) up to 20 MHz and magnetic fields up to 15 T for a single crystal of La2CuO4+y with y varied in the range 0.001-0.01. The frequency dependence of the conductivity at low temperatures follows a power law, which is typical of conventional doped semiconductors. ε1 at high ω is independent of ω and grows as the insulator to metal transition (IMT) is approached, but only for the electric field in the CuO2 layers, indicating that the IMT is two-dimensional For the highest oxygen concentration, this excess ε1 was reduced by a factor of 2 at a magnetic field of 15 T perpendicular to the CuO2 layers.layers
Additional details
Publishing Information
- Publisher
- Elsevier Science Pub. Co., Inc.
- Imprint Place
- New York, NY (USA)
- Imprint Title
- Proceedings of the international conference on materials and mechanisms of superconductivity. High temperature superconductors II. Part 1-2
- Imprint Pagination
- 1744 p.
- Journal Page Range
- p. 1031-1032.
Conference
- Title
- International conference on materials and mechanisms of superconductivity - high-temperature superconductors II.
- Dates
- 23-28 Jul 1989.
- Place
- Stanford, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21057782
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COPPER OXIDES; CRITICAL FIELD; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRICAL INSULATORS; FREQUENCY DEPENDENCE; LANTHANUM OXIDES; LAYERS; LOW TEMPERATURE; OXYGEN; PHASE TRANSFORMATIONS; SUPERCONDUCTIVITY; SUPERCONDUCTORS; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE EARTH COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-890718--.