Published March 1980 | Version v1
Journal article

Charge transport and pressure dependence of Tsub(c) of single crystal, ferromagnetic EuB6

  • 1. IBM Watson Research Center, Yorktown Heights, NY (USA)
  • 2. California Univ., San Diego, La Jolla (USA). Inst. of Pure and Applied Physical Sciences

Description

A report is presented on Hall Effect and resistivity data which demonstrate that EuB6 is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, Tsub(c) = 13.7 K. An anomalously large, positive pressure dependence of Tsub(c), (1/Tsub(c))(ΔTsub(c)/ΔP) approximately = 4 x 10-2 kbar-1, is also reported. (author)

Additional details

Publishing Information

Journal Title
Solid State Commun.
Journal Volume
33
Journal Issue
10
Series
Solid State Commun.
Journal Page Range
1055-1058
ISSN
0038-1098