Published 1988 | Version v1
Book Metadata-only

Submicron wiring technology with tungsten and planarization

Creators

  • 1. IBM Gen. Tech. Div., Essex Junction, VT (USA)

Description

A submicron wiring technology has been designed, built, and proven reliable. This fully integrated technology features CVD-tungsten (W) and planarization. Vertical W studs maximize density by reducing contact/via ground rules and by facilitating the use of thick insulators for minimum capacitance. Complementary insulator and W planarization eliminates steps and ease patterning. As a result, circuit performance is enhanced without sacrificing yield or reliability

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
1988 proceedings of the fifth international IEEE VLSI multilevel interconnection conference
Journal Page Range
p. 21-28.

Conference

Title
5. IEEE international VLSI multilevel interconnection conference.
Dates
13-14 Jun 1988.
Place
Santa Clara, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20055731
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRICAL INSULATION; ELECTRICAL INSULATORS; FABRICATION; INTEGRATED CIRCUITS; TUNGSTEN; VAPOR DEPOSITED COATINGS; WIRES
Descriptors DEC
CHEMICAL COATING; COATINGS; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; METALS; PHYSICAL PROPERTIES; SURFACE COATING; TRANSITION ELEMENTS