Published December 2016
| Version v1
Journal article
Resonant features of the terahertz generation in semiconductor nanowires
Creators
- 1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- 2. Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Centre (Russian Federation)
- 3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- 4. Aalto University, Department of Micro- and Nanosciences, Micronova (Finland)
Description
The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 12
- Journal Page Range
- p. 1561-1565
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48093888
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; NANOWIRES; P-TYPE CONDUCTORS; THZ RANGE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ENERGY-LEVEL TRANSITIONS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR MATERIALS
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.