Published January 1, 2008 | Version v1
Journal article

Focused ion beam processing of organic crystal (TMTSF)2PF6. A combined conducting probe atomic force microscopy and secondary ion mass spectrometry study

  • 1. Laboratoire de Physique des Solides, UMR CNRS 8502, Universite Paris-Sud, 91405 Orsay (France)
  • 2. Laboratoire de Genie Electrique de Paris, UMR CNRS 8507, Supelec, Universite Paris-Sud, Universite Pierre et Marie Curie, 91192 Gif Sur Yvette (France)
  • 3. Laboratoire de Physique des Solides et de Cristallogenese, UMR CNRS 8635, 92195 Meudon (France)

Description

We study the behavior of the organic material (TMTSF)2PF6 (TMTSF: tetramethyl tetraselena fulvalene) under focused Ga+ ion beam impact using conducting probe atomic force microscopy (CP-AFM) and secondary ion mass spectrometry. The (TMTSF)2PF6 crystals are exposed to a 25 keV focused ion beam with the sample native surface both perpendicular and slightly tilted to the incident beam axis, where drastically different etching effects are observed. Moreover, very large ion implantation depth, as compared to conventional substrates, is obtained when the sample surface is set perpendicular to the beam axis, while the implantation depth is much smaller at the tilted angle. This phenomenon is discussed in relation with the sample structure anisotropy. Finally, the transport property modifications of the impact areas are investigated by CP-AFM and discussed in relation with both the crystalline structure and the polarizability of the matrix

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
103
Journal Issue
1
Journal Page Range
p. 013711-013711.6
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2008 American Institute of Physics