Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers

In2Se3 single crystals ∼40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity (σ) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In2Se3 were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In2Se3 structures, the nature of the interband transitions and band gap of In2Se3 crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.