Materials having a zero resistance transition temperature above 200 k and method for maintaining the zero resistance property
Description
A method is described for making a multiphase copper oxide based material Of Y5Ba6Cu11 Oxide containing a phase having a zero resistance transition temperature above about 200K, said method comprising: forming a copper oxide based material precursor consisting essentially of Y, Ba, Cu, and 0, which precursor can be oxygenated to yield said multiphase copper oxide based material; and subjecting said precursor to a high temperature heating process at a temperature greater than 900 C for at least 10 hours; subjecting said precursor to a low temperature oxygenation process in an atmosphere comprising at least about 20% oxygen by volume at a temperature less than about 200 C for at least 72 hours to form said multiphase copper oxide based material
Availability note (English)
Available from Patent and Trademark Office, Box 9, Washington, DC 20232 (United States).Additional details
Publishing Information
- Imprint Pagination
- [10 p.].
- IPC:
- Int. Cl. C01F 11/02; C01F 17/00; C01G 3/02.
- IPC
- Int. Cl. C01F 11/02; C01F 17/00; C01G 3/02.
- Patent number
- US patent document 5,232,904/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25005528
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- BARIUM OXIDES; COPPER OXIDES; FABRICATION; HEATING; HIGH-TC SUPERCONDUCTORS; OXIDATION; PRECURSOR; SUPERCONDUCTIVITY; SYNTHESIS; TEMPERATURE RANGE 0065-0273 K; TRANSITION TEMPERATURE; YTTRIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SUPERCONDUCTORS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Secondary number(s)
- US patent application 7-704,913.