On mechanism of Si-SiO2 charge paltern interface formation during low energy electron irradiation

Experiments directed at the determination of Si-SiO2 interface potential heterogeneity increase mechanism during irradiation of MJS-structures by low-energy electrons (We 20 keV) are described. Comparative study of the character of thermofield treatments and radiation effects on the energy spectrum of surface electron states near the bottom of silicon conductivity region and value of electron mobility near the surface channels is carried out. As a result it is detected that an increase in the amplitude of silicon surface potential fluctuations in the process of MJS-structure irradiation is mainly caused by local reconstruction of near the surface valency bonds of oxide leading to variations in their valency lengths and angles