Published January 15, 1987
| Version v1
Journal article
The physics of radiation damage in particle detectors
Description
Intense high-energy particle beams cause damage to semiconductor detectors and signal-conditioning electronics by displacement and long-term ionization effects. While first-principles prediction of effects are not practical, the magnitude of each effect can be scaled approximately between particle energy and type by using an appropriate scaling parameter. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 253
- Journal Issue
- 3
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 453-459
- ISSN
- 0168-9002
- CODEN
- NIMAE
Conference
- Title
- New developments in radiation detectors.
- Acronym
- 4. European symposium on semiconductor detectors
- Dates
- 3-5 Mar 1986.
- Place
- Muenchen (Germany, F.R.).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 18033049
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOM COLLISIONS; CAPACITORS; COUNTING CIRCUITS; CRYSTAL DEFECTS; ENERGY DEPENDENCE; IONIZATION; MOSFET; PARTICLE TRACKS; PHYSICAL RADIATION EFFECTS; RANGE; READOUT SYSTEMS; RECOILS; SCALING LAWS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- COLLISIONS; CRYSTAL STRUCTURE; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ELEMENTS; ENERGY STORAGE SYSTEMS; EQUIPMENT; FIELD EFFECT TRANSISTORS; MATERIALS; MEASURING INSTRUMENTS; MOS TRANSISTORS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS