Conductivity, charge transport, and ferroelectricity of La-doped BaTiO3 epitaxial thin films
Creators
- 1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006 (China)
- 2. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 21009 (China)
- 3. Guangdong Provincial Key Laboratory of Optical Information Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006 (China)
Description
La-doped BaTiO3 thin films (BLTO) were deposited by pulsed laser deposition, and a comprehensive investigation on their conductivity, charge transport, and ferroelectricity was carried out. Resistivity-temperature (T) measurements demonstrate that the conductivity of Ba1−xLaxTiO3 (x = 0.05, 0.1, 0.2, 0.3, and 0.4) films can be largely regulated in a wide range. The BLTO film exhibits typical semiconductor conduction behavior for x ⩽ 0.3, whereas a typical metallic conduction behavior was observed for x = 0.4 at T > 240 K. The La doping concentration x also plays an important role on the charge transport mechanisms. For x ⩽ 0.3, the charge transport follows small-polaron hopping at low temperature (T < 300 K) and thermal excitation at high temperature (T ⩾ 300 K). While the charge transport for x = 0.4 changes from small-polaron hopping to thermal phonon scattering with the increase of temperature. Piezo-force microscopy measurements reveal that BLTO films exhibit ferroelectricity for La doping concentration x up to 0.4. These results demonstrated that La doping plays an important role in regulating the conductivity and charge transport in BLTO films. More importantly, we revealed experimentally that macro metallic conduction and ferroelectricity can coexist in the La-doped BaTiO3 epitaxial thin films. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab4c01Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 53
- Journal Issue
- 2
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52055129
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHARGE TRANSPORT; CONCENTRATION RATIO; DOPED MATERIALS; ENERGY BEAM DEPOSITION; EPITAXY; EXCITATION; LASER RADIATION; MICROSCOPY; PHONONS; POLARONS; PULSED IRRADIATION; SCATTERING; SEMICONDUCTOR MATERIALS; THIN FILMS; TITANATES; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; DEPOSITION; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; ENERGY-LEVEL TRANSITIONS; FILMS; IRRADIATION; MATERIALS; OXIDES; OXYGEN COMPOUNDS; QUASI PARTICLES; RADIATIONS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS