Realization of semimagnetic and magnetic topological insulators via topological surface states floating
Creators
- 1. College of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang, Hebei 050024, China
- 2. School of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang, Hebei 050024, China
- 3. International Centre for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- 4. Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
Description
The observation temperatures of quantum anomalous Hall effect in semimagnetic and magnetic topological insulator (MTI) heterostructures are always much lower than Curie temperature. Here, we theoretically demonstrate that floating of topological surface states (TSSs) into magnetic insulators is not only able to produce ideal semi-MTI heterostructures, but also provides insight into the origin of extremely low observation temperature of the quantum anomalous Hall effect in different MTIs. We show that the emergence of diving and floating of TSSs can be observed in family heterostructures. Within the TSSs floating systems, and exhibit characteristics of ideal semi-MTIs, featuring a tunable Fermi level, and is found to be MTI with weak (strong) long-range ferromagnetic coupling and large (small) surface gap. Our findings reveal that the observation temperature of quantum anomalous Hall effect is governed by the smaller of the two surface gaps, rather than being directly linked to the Curie temperature of MTIs.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.155427;
- Crossref Funder ID
- 10.13039/501100001809; 10.13039/501100003787; 10.13039/100008970; 10.13039/501100012226; 10.13039/501100009076;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 15
- Journal Page Range
- 7 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANTIMONY SELENIDES; ANTIMONY TELLURIDES; BISMUTH SELENIDES; COUPLING; CURIE POINT; ELECTRICAL INSULATORS; FERMI LEVEL; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HALL EFFECT; HETEROJUNCTIONS; IRON SELENIDES; MANGANESE OXIDES; SURFACES; TOPOLOGY
- Descriptors DEC
- ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ENERGY LEVELS; EQUIPMENT; IRON COMPOUNDS; MAGNETIC MATERIALS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; MATHEMATICS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 11974098; 11974327; A202305017; 2019B16; WK3510000010; WK2030020032
- Notes
- These authors contributed equally to this work.; Contact Email: Corresponding author: qisf@hebtu.edu.cn; Contact Email: Corresponding author: qiao@ustc.edu.cn; Record automatically processed
- Funding organization
- National Natural Science Foundation of China; Natural Science Foundation of Hebei Province; Hebei Normal University of Science and Technology; Fundamental Research Funds for the Central Universities; University of Science and Technology of China