Model of thermal peak for description of track formation in semiconductor crystals irradiated by heavy high-energy ions

The applicability of the thermal peak model for describing the processes of the defect and track formation in the semiconducting crystals is considered for the first time. The effect of the model parameters such as a heat capacity, thermal conductivity , coefficient of the electron-phonon coupling as a function of temperature, is considered. Comparison of the theoretical data with the experimental results for the InP and Ge crystals, irradiated by the superhigh energy heavy ions, testifies to the adequacy of this approach and the possibility of obtaining the quantitative evaluations of the track formation. In particular, the diameter of the cylindrical molten area, formed by the transition of the Xe+ ions with the energy of 250 MeV in the InP, is equal to 20 nm, whereas the diameters of the tracks cross section constitute 7-15 nm