Published March 3, 2014
| Version v1
Journal article
Coherent acoustic phonon generation in GaAs1−xBix
- 1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Thiruvananthapuram, Kerala 695016 (India)
- 2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)
Description
We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1−xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs1−xBix layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities
Additional details
Identifiers
- DOI
- 10.1063/1.4867702;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 9
- Journal Page Range
- p. 091903-091903.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45104459
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; BISMUTH; BISMUTH COMPOUNDS; DEFORMATION; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; LASER RADIATION; LAYERS; OSCILLATIONS; PHONONS; POTENTIALS; STRAINS; STRESSES; SURFACES; VALENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; METALS; PNICTIDES; QUASI PARTICLES; RADIATIONS; SORPTION
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC