Published March 3, 2014 | Version v1
Journal article

Coherent acoustic phonon generation in GaAs1−xBix

  • 1. Indian Institute of Science Education and Research Thiruvananthapuram (IISER-TVM), CET Campus, Thiruvananthapuram, Kerala 695016 (India)
  • 2. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)

Description

We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs1−xBix. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs1−xBix layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
9
Journal Page Range
p. 091903-091903.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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