Published June 2004 | Version v1
Miscellaneous Open

Synchrotron X-ray studies of thermally annealed silicon implanted with high energy Ar ions

Creators

  • 1. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 2. Institute of Atomic Energy, Otwock-Swierk (Poland)
  • 3. Institute of Physics, PAS, Warsaw (Poland)
  • 4. HASYLAB at Desy, Hamburg (Germany)

Description

no abstract available

Files

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Part of:
Annual Report 2003 of the Institute of Atomic Energy

Additional details

Publishing Information

Imprint Title
Annual Report 2003 of the Institute of Atomic Energy
Imprint Pagination
173 p.
Journal Page Range
p. 99-100
ISSN
1507-5478
Report number
INIS-PL--2005-0002

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36036763
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; ARGON IONS; CRYSTAL DEFECTS; ION IMPLANTATION; SILICON; SPATIAL DISTRIBUTION; STRAINS; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
BREMSSTRAHLUNG; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONS; RADIATIONS; SCATTERING; SEMIMETALS

Optional Information

Notes
2 figs