Ion implantation

Scientific interest in the process of ion implantation arises because it provides an important tool for studying a wide range of topics, including particularly ion-solid interactions, radiation damage mechanisms and effects, and nonequilibrium doping and diffusion phenomena. Industrial interest in the process arises because it provides an electronically controllable technique for introducing atomic species into a target that can alter the chemical, optical, metallurgical and/or electronic properties of the target material. However, these same properties are also profoundly affected by the damage that is produced in the target by the implanted ions. It is important to know how much damage is produced for given implantation conditions, what its depth distribution will be, how thoroughly it may be removed by annealing, and what impurity precipitation and redistribution phenomena may occur during the annealing cycle. The author reviews each of these topics. (Auth.)