Published September 1973
| Version v1
Journal article
On the effect of the type of doping impurity of the 5 group on annealing of γ-radiation-induced defects in germanium
- 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- О влиянии типа легирующей примеси V группы на процесс отжига γ-радиационных дефектов в германии
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 7
- Journal Issue
- 9
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1839-1841
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 5119584
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ANTIMONY; ARSENIC; BISMUTH; CRYSTAL DEFECTS; CRYSTAL DOPING; GAMMA RADIATION; GERMANIUM; N-TYPE CONDUCTORS; PHOSPHORUS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONIZING RADIATIONS; METALS; NONMETALS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.