Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO₂ covered with a thin AlN buffer layer

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO₂ covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO₂ substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO₂/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0–2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p–i–n nanocolumns were fabricated on SiO₂/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO₂. (paper)