Published January 1984 | Version v1
Journal article

Fabrication of Nb-notorys microbridge by using SEBL

  • 1. Institute of Semiconductors, Academia Sinica

Description

This paper presents the technique of making Nb-notorys microbridge with submicron bridge width by using scanning electron beam lithography (SEBL)

Additional details

Publishing Information

Journal Title
Chin. Phys.
Journal Volume
4
Journal Issue
1
Series
Chin. Phys.
Journal Page Range
182-185

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16013015
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRON BEAMS; FABRICATION; JOSEPHSON JUNCTIONS; NIOBIUM
Descriptors DEC
BEAMS; ELEMENTS; LEPTON BEAMS; METALS; PARTICLE BEAMS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS