Radiation induced bulk damage in silicon diodes with pions and protons

Future high energy physics experiments will make large use of silicon detectors both for tracking and vertexing purposes. Due to the very high radiation environment in which they have to operate, many studies have been carried out with the aim of extrapolating from radiation damaged diodes data the lifetime of silicon detectors. Here we present data collected with 190 MeV pions and 300 MeV protons for diodes of different resistivities and manufactures. Changes in full depletion voltage and leakage current have been studied at 5 C and room temperature up to fluences of 1014 cm-2. Our data show that lower resistivity diodes have the same leakage current damage constant but a longer lifetime in terms of change in depletion voltage. We also confirm that 190 MeV pions are more damaging than 300 MeV protons in terms of both effective doping concentration and leakage current. (orig.)