Published 1994 | Version v1
Book Metadata-only

Influence of cell structure on the SEU sensitivity of a SRAM

Creators

  • 1. MATRA MHS, 44 - Nantes (France)
  • 2. CEA Centre d'Etudes de Bruyeres-le-Chatel, 91 (France)

Description

We have experimentally studied the Single Event Upset sensitivity of CMOS on an epilayer 64 Kbit SRAM test vehicle. The device cross sections have been measured using accelerator beams and we have investigated the influence of the memory cell structure on the asymptotic cross section. (author). 5 refs., 5 figs., 1 tab

Part of:
Radiation and its effects on components and systems

Additional details

Publishing Information

Publisher
Commissariat a l'Energie Atomique.
Imprint Place
Bruyeres-le-Chatel (France)
Imprint Title
Radiation and its effects on components and systems
Imprint Pagination
596 p.
Journal Page Range
p. 560-562.

Conference

Title
2. European Conference on Radiation and its Effects on Components and Systems.
Dates
13-16 Sep 1993.
Place
Saint-Malo (France).

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
27008829
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CEA BRUYERES-LE-CHATEL; COMPUTERIZED SIMULATION; COPPER 60; DEPLETION LAYER; DIFFERENTIAL CROSS SECTIONS; ERRORS; GAIN; INTEGRATED CIRCUITS; LET; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; POST-IRRADIATION EXAMINATION; SEMICONDUCTOR STORAGE DEVICES; TANDEM ELECTROSTATIC ACCELERATORS; THREE-DIMENSIONAL CALCULATIONS; TRAPPED ELECTRONS
Descriptors DEC
ACCELERATORS; AMPLIFICATION; BETA DECAY RADIOISOTOPES; BETA-PLUS DECAY RADIOISOTOPES; CEA; COPPER ISOTOPES; CROSS SECTIONS; ELECTRON CAPTURE RADIOISOTOPES; ELECTRONIC CIRCUITS; ELECTRONS; ELECTROSTATIC ACCELERATORS; ELEMENTARY PARTICLES; ENERGY TRANSFER; FERMIONS; FRENCH ORGANIZATIONS; INTERMEDIATE MASS NUCLEI; ISOTOPES; LEPTONS; MEMORY DEVICES; MINUTES LIVING RADIOISOTOPES; NATIONAL ORGANIZATIONS; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; SIMULATION; TRANSISTORS

Optional Information