Published December 1999 | Version v1
Journal article

Nonpolarizing radiation detectors based on wide-gap semiconductor crystals

  • 1. Institute of Physicotechnical Problems, Dubna (Russian Federation)
  • 2. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

Description

Wide gap, insulating semiconductor crystals offer great promise in photoelectric devices, especially as detectors of electromagnetic and nuclear radiation, but are not widely used because they become polarized during operation. During operation of detectors using these crystals with a high concentration of deep impurity levels, electrical charges build up and produce a change, over time, in the electric field within the crystal and in the magnitude of the detector photoresponse. Since it is impossible to avoid impurity centers in these crystals at this time, we propose new approaches to creating radiation detectors-dosimeters which do not become polarized over time, but rely on productive use of the polarization charges that accumulate in them

Additional details

Identifiers

DOI
10.1134/1.1187919;
PII
S1063-7826(99)01712-3;

Publishing Information

Journal Title
Semiconductors
Journal Volume
33
Journal Issue
12
Journal Page Range
p. 1328-1330
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051821
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
DOSEMETERS; EXPERIMENTAL DATA; PHOTODETECTORS; POLARIZATION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; THEORETICAL DATA
Descriptors DEC
DATA; INFORMATION; MEASURING INSTRUMENTS; NUMERICAL DATA; RADIATION DETECTORS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 33, 1475-1478 (December 1999); (c) 1999 American Institute of Physics.