Published March 16, 1984
| Version v1
Journal article
Growth and physical properties of TlBiTe2 crystals
Description
Single crystals of TlBiTe2 are prepared and analysed by microprobe analysis. Electrical conductivity, thermoelectric power, Hall effect, and IR reflectivity in the plasma oscillation region are obtained. Results indicate a n-type semiconducting behaviour; the character of scattering of the free carriers, the dielectric constant, the electron concentration, the conductivity effective mass, and the Fermi level are calculated. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 82
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 295-299
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 15061131
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; CARRIER DENSITY; CARRIER MOBILITY; EFFECTIVE MASS; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; FERMI LEVEL; HALL EFFECT; MICROANALYSIS; MONOCRYSTALS; N-TYPE CONDUCTORS; PERMITTIVITY; REFLECTION; THALLIUM TELLURIDES; THERMAL CONDUCTIVITY; THERMOELECTRICITY
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTALS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRICITY; ENERGY LEVELS; MASS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; THALLIUM COMPOUNDS; THERMODYNAMIC PROPERTIES