Published June 1, 1991 | Version v1
Journal article

Experimental and molecular-dynamics study of the Ar emission mechanism during low-energy Ar+ bombardment of Cu

  • 1. Philips Research Laboratories, P.O. Box 80 000, 5600 JA Eindhoven (The Netherlands)
  • 2. Department of Chemistry, The Pennsylvania State University, University Park, PA (USA)

Description

Angle-resolved time-of-flight distributions of Ar atoms emitted during Ar+ bombardment of Cu have been measured and compared to results of molecular-dynamics simulations. For keV incident energies, implanted Ar atoms escape peaked along the surface normal, due to a high excitation density of the surface, induced by a nearby Ar+ impact, and the negligible attraction between Ar and Cu. At low incident energies, the simulations show that the Ar is trapped for a short time in the first Cu layers, undergoes a few collisions and is emitted in a similar direction but at higher kinetic energy

Additional details

Publishing Information

Journal Title
Physical Review, B: Condensed Matter
Journal Volume
43
Journal Issue
16
Series
Phys. Rev., B: Condens. Matter.
Journal Page Range
13695-13698
ISSN
0163-1829
CODEN
PRBMD