Published June 2015 | Version v1
Journal article Metadata-only

Low-temperature heteroepitaxial growth of InAlAs layers on ZnSnAs2/InP(001)

Creators

  • 1. Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Niigata (Japan)
  • 2. Center for Instrumental Analysis, College of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara 252-0206, Kanagawa (Japan)

Description

We studied the epitaxial growth of InAlAs on ZnSnAs2 thin films to establish magnetic heterostructures involving ferromagnetic Mn-doped ZnSnAs2 (ZnSnAs2:Mn) thin films. These heterostructures were successfully grown at temperatures around 300 C to maintain room-temperature ferromagnetism in ZnSnAs2:Mn. Reflection high-energy electron diffraction, X-ray diffraction measurements and cross-sectional transmission electron microscopy revealed that the InAlAs layers were pseudomorphically lattice-matched with ZnSnAs2, even at the low temperature of 300 C. We attempted to prepare magnetic quantum well structures from the InAlAs/ZnSnAs2:Mn magnetic multilayer structure. We found that InAlAs layers heteroepitaxially grown on ZnSnAs2 and ferromagnetic ZnSnAs2:Mn films are suitable for preparing InP-based magnetic semiconductor quantum structures. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201400246

Additional details

Identifiers

DOI
10.1002/pssc.201400246;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
12
Journal Issue
6
Journal Page Range
p. 516-519
ISSN
1610-1642

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
46105895
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRON DIFFRACTION; FERROMAGNETIC MATERIALS; GRAIN ORIENTATION; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MAGNETIC SEMICONDUCTORS; MANGANESE ADDITIONS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TIN ARSENIDES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC ARSENIDES
Descriptors DEC
ALLOYS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; FILMS; INDIUM COMPOUNDS; MAGNETIC MATERIALS; MANGANESE ALLOYS; MATERIALS; MICROSCOPY; MICROSTRUCTURE; NANOSTRUCTURES; ORIENTATION; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TIN COMPOUNDS; TRANSITION ELEMENT ALLOYS; ZINC COMPOUNDS

Optional Information

Notes
With 6 figs., 26 refs.