Controlling the Temperature and Speed of the Phase Transition of VO2 Microcrystals
Creators
- 1. Yonsei University, Seoul (Korea, Republic of). Dept. of Physics
- 2. Hong Kong University, of Science and Technology (China). Dept. of Mechanical and Aerospace Engineering
- 3. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source
- 4. Gwangju Institute of Science and Technology (Korea, Republic of). Dept. of Physics and Photon Science, Ertl Center for Electrochemistry and Catalysis
Description
Here, we investigated the control of two important parameters of vanadium dioxide (VO2) microcrystals, the phase transition temperature and speed, by varying microcrystal width. By using the reflectivity change between insulating and metallic phases, phase transition temperature is measured by optical microscopy. As the width of square cylinder-shaped microcrystals decreases from ~70 to ~1 μm, the phase transition temperature (67 °C for bulk) varied as much as 26.1 °C (19.7 °C) during heating (cooling). In addition, the propagation speed of phase boundary in the microcrystal, i.e., phase transition speed, is monitored at the onset of phase transition by using the high-speed resistance measurement. The phase transition speed increases from 4.6 × 10 2 to 1.7 × 10 4 μm/s as the width decreases from ~50 to ~2 μm. While the statistical description for a heterogeneous nucleation process explains the size dependence on phase transition temperature of VO2, the increase of effective thermal exchange process is responsible for the enhancement of phase transition speed of small VO 2 microcrystals. These findings not only enhance the understanding of VO 2 intrinsic properties but also contribute to the development of innovative electronic devices.
Availability note (English)
Available from http://www.osti.gov/pages/servlets/purl/1379049; http://www.osti.gov/pages/biblio/1379049; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- ACS Applied Materials and Interfaces
- Journal Volume
- 8
- Journal Issue
- 3
- Journal Page Range
- p. 2280-2286
- ISSN
- 1944-8244
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 48090599
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTALS; ELECTRIC CONDUCTIVITY; OPTICAL MICROSCOPY; OXIDATION; PHASE STUDIES; PHASE TRANSFORMATIONS; TRANSITION TEMPERATURE; VANADIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRICAL PROPERTIES; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC02-05CH11231
- Funding organization
- USDOE Office of Science - SC, Basic Energy Sciences (BES) (SC-22) (United States)
- Secondary number(s)
- OSTIID--1379049