Generation-recombination mechanism of point defect cluster formation in crystal

By means of a simple model it is shown that in the process of generation-recombination of V vacancies and I superflous atoms spatial defects distribution is realized in a crystal which essentially differs from equiprobable with a strongly expressed tendency to coagulation of the same name defects. Calculated are conclentrations of V, I having a different number of K defects in a surrounding recombination sphere (in particular, maximum is defect concentration with K equal to maximum permissible filling of recombination sphere by the defects of the same name) and total V, I concentrations