Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation. (condensed matter: electronic structure, electrical, magnetic, and optical properties)