Published March 2008
| Version v1
Journal article
Pulsed laser simulation of VLSI single-event effect testing study
- 1. Lanzhou Inst. of Physics, National Laboratory of Vacuum and Cryogenics Technology and Physics, Lanzhou (China)
- 2. Beijing Inst. of Control Engineering, Beijing (China)
Description
This paper describes a study aimed at investigating the pulsed laser simulation of Single-Event Effect (SEE) testing for VLSI Intel386EX CPU, using our laboratory LSS (laser simulation system). We have detailed SEE testing principle, testing method, testing system constituting, testing result. It validates that our laser pulses simulate may use SEE testing in VLSI, and Intel 386Ex have a large locking resistance to single event. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 28
- Journal Issue
- 2
- Journal Page Range
- p. 371-375
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 41064790
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- INTEGRATED CIRCUITS; LASER RADIATION; MICROPROCESSORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; PULSES; SIMULATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS; RADIATION EFFECTS; RADIATIONS; TESTING
Optional Information
- Notes
- 8 figs., 1 tab., 6 refs.