Interphase interactions in Au/V/GaAs junctions

Structural phase transformations have been studied in the system Au/V/GaAs occurring upon deposition and under treatment at 100-600 deg C. It is shown that at deposition of V there forms a thin transitional layer at the boundary with GaAs, containing intermetallides V-Ga and V-As. Thermally stimullated processes of diffusion and phase formation begin at 400 deg C. After annealing at 500-600 deg C a large number of compounds (AuGa, AuGa2, AuV3, VAs, V3As were identified) are formed. These compounds are nonuniformly distributed with respect to depth. Later structural phase inhomogeneities are observed in the junction layer