Kinetics of scanned electron beam annealing of high-energy as ion implanted silicon

(100) Si specimens implanted with a dose of 1015 As++ cm-2 at an ion energy of 760 keV contain a buried amorphous layer due to radiation damage which is annealed by irradiation with a scanned electron beam. The different stages of the solid-phase epitaxial regrowth and the residual damage are made visible by transmission electron microscopy of cross-sectional specimens. The regrowth rate of the interface of the amorphous zone facing the specimen surface is 50% higher than that of the interface facing the bulk. This difference is attributed to the dependence of the regrowth rate on the concentration gradient of diffusing point defects. (author)