Published 2004 | Version v1
Miscellaneous Metadata-only

Luminescent Si nanocrystals in SiO2 layers by ion-beam synthesis with intermediate annealing

Creators

  • 1. Institute of Semiconductor Physics, Novosybirsk (Russian Federation)
  • 2. Physico-Technical Research Institute of Nizhnij Novgorod University, Nizhnij Novgorod (Russian Federation)

Description

no abstract available

Part of:
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004

Additional details

Publishing Information

Imprint Title
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Imprint Pagination
257 p.
Journal Page Range
p. 31

Conference

Title
5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Dates
14-17 Jun 2004
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060031
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ANNEALING; ELECTRON MICROSCOPY; ION BEAMS; ION IMPLANTATION; LAYERS; MONTE CARLO METHOD; NANOSTRUCTURES; NUCLEATION; PHOTOLUMINESCENCE; RADIATION DOSES; RAMAN SPECTRA; SILICON IONS; SILICON OXIDES
Descriptors DEC
BEAMS; CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; DOSES; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICON COMPOUNDS; SPECTRA

Optional Information