Published 1998
| Version v1
Journal article
Investigation of quantum dot structures grown by MOCVD in InAs/GaAs
Creators
- 1. Institute of Experimental Physics, Warsaw University, Warsaw (Poland)
- 2. Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland)
Description
Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band. (author)
Additional details
Publishing Information
- Journal Title
- Acta Physica Polonica. Series A
- Journal Volume
- 94
- Journal Issue
- 3
- Journal Page Range
- p. 369-373
- ISSN
- 0587-4246
Conference
- Title
- 27. International School on Physics of Semiconducting Compounds
- Dates
- 7-12 Jun 1998
- Place
- Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31027609
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; GALLIUM ARSENIDES; INDIUM ARSENIDES; MEETINGS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; ELECTRON MICROSCOPY; EMISSION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MECHANICS; MICROSCOPY; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; SURFACE COATING
Optional Information
- Contract/Grant/Project number
- KBN grants no. PBZ.11/P4 and 8T11B 0033 12
- Notes
- 4 refs, 3 figs