Published November 19, 2010 | Version v1
Journal article

Growth and characterization of ceria thin films and Ce-doped γ-Al2O3 nanowires using sol-gel techniques

  • 1. Mechanical and Manufacturing Engineering Department, Engineering School, University of Cyprus, 1678, Nicosia (Cyprus)
  • 2. Faculty of Engineering and Physical Sciences, University of Surrey, Guildford GU2 7XH (United Kingdom)
  • 3. Department of Chemical Engineering and CHN/NCOE Nanomanufacturing Center, University of Massachusetts Lowell, Lowell, MA 01854 (United States)
  • 4. Institute for Health and Consumer Protection, Joint Research Centre of the European Commission, 21027 Ispra (Italy)

Description

γ-Al2O3 is a well known catalyst support. The addition of Ce to γ-Al2O3 is known to beneficially retard the phase transformation of γ-Al2O3 to α-Al2O3 and stabilize the γ-pore structure. In this work, Ce-doped γ-Al2O3 nanowires have been prepared by a novel method employing an anodic aluminium oxide (AAO) template in a 0.01 M cerium nitrate solution, assisted by urea hydrolysis. Calcination at 500 deg. C for 6 h resulted in the crystallization of the Ce-doped AlOOH gel to form Ce-doped γ-Al2O3 nanowires. Ce3+ ions within the nanowires were present at a concentration of < 1 at.%. On the template surface, a nanocrystalline CeO2 thin film was deposited with a cubic fluorite structure and a crystallite size of 6-7 nm. Characterization of the nanowires and thin films was performed using scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. The nanowire formation mechanism and urea hydrolysis kinetics are discussed in terms of the pH evolution during the reaction. The Ce-doped γ-Al2O3 nanowires are likely to find useful applications in catalysis and this novel method can be exploited further for doping alumina nanowires with other rare earth elements.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/21/46/465606

Additional details

Identifiers

DOI
10.1088/0957-4484/21/46/465606;
PII
S0957-4484(10)62776-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
21
Journal Issue
46
Journal Page Range
[10 p.]
ISSN
0957-4484