Published December 2018
| Version v1
Journal article
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
Creators
- 1. St. Petersburg Academic University (Russian Federation)
Description
The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors (Woodbury, N.Y., Print)
- Journal Volume
- 52
- Journal Issue
- 16
- Journal Page Range
- p. 2128-2131
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51109292
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BUFFERS; CRYSTAL GROWTH; GALLIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; NUCLEATION; P-N JUNCTIONS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTALS; EPITAXY; GALLIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2018 Pleiades Publishing, Ltd.