Published February 1997
| Version v1
Journal article
Direct observation of plasmon excitation in Si-SiO2 by γ-rays
- 1. Xinjiang Petroleum College, Urumqi (China)
- 2. Beijing Centre of Physical and Chemical Analysis, Beijing (China)
Description
The first level plasmons of Si (located at B.E.116.95 eV) and SiO2 (located at B.E.122.0 eV) in radiation hardened and non-hardened Si-SiO2 were investigated by XPS before and after 60Co irradiation. The experimental results indicate that the interface consisting of the two plasmons extends toward the surface of SiO2, and the centre of the interface moves toward the surface of SiO2 after the irradiation. The concentration of plasmons depends on radiation dose, irradiation bias field and the growth process of Si-SiO2
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 20
- Journal Issue
- 2
- Journal Page Range
- p. 91-94.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 28043248
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; DEPTH; ELECTRIC FIELDS; GAMMA RADIATION; INTERFACES; IONIZING RADIATIONS; PHOTOELECTRON SPECTROSCOPY; PLASMONS; RADIATION DOSES; SILICON; SILICON OXIDES; SPATIAL DISTRIBUTION; X-RAY SPECTROSCOPY
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; QUASI PARTICLES; RADIATIONS; RADIOISOTOPES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; YEARS LIVING RADIOISOTOPES