Published April 16, 1983
| Version v1
Journal article
Defect diffusion during ion implantation into GaAs
Creators
- 1. Friedrich-Schiller-Universitaet, Jena (German Democratic Republic). Sektion Physik
Description
The connection between radiation damage and near-edge optical absorption of ion implanted GaAs was studied by measuring the total absorption exponent of the sample at different etching depths for Ar+ and N+ implantation at 300 K and 80 K, respectively, in dependence on photon energy. Optical transmission and Rutherford backscattering measurements of etched samples show that creation of amorphous layers in GaAs by Ar+ implantation at 300 K is connected with diffusion of point-like defects into depths behind the amorphous layer
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 76
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K197-K201
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14784823
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; AMORPHOUS STATE; ARGON ISOTOPES; DEPTH; DIFFUSION; ETCHING; GALLIUM ARSENIDES; ION BEAMS; ION IMPLANTATION; NITROGEN ISOTOPES; OPACITY; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RUTHERFORD SCATTERING; SPATIAL DISTRIBUTION; SPECTRA
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELASTIC SCATTERING; GALLIUM COMPOUNDS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SCATTERING; SURFACE FINISHING
Optional Information
- Notes
- Short note.