Reversibility of induced defects in silicon lattice irradiation by neutrons

Material behaviour under neutron irradiation has been increasingly studied by a large number of researchers, because of its relevance for reliability criteria in modern nuclear electronics in the neighborhood of high intensity radiation plants (e.g. for high energy research). The use of neutron irradiation (NTD) of silicon for obtaining new parameters or more rapid devices has been one of our tasks in the last years. We have learned to control the irradiation and recovering of single crystal silicon but a knowledge of defect generation by irradiation (number and type of defects), especially the mechanism of recovery by different treatment after irradiation (annealing), is necessary. (Author)